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This work describes the high-temperature performance and avalanche capability of normally-off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors (Fin-JFETs). The GaN Fin-JFETs were fabricated by NexGen Power Systems, Inc. on 100-mm GaN-on-GaN wafers. The threshold voltage ( V\text TH) is over 2 V with less than 0.15 V shift from 25 &#x00B0;C to 200 &#x00B0;C. The specific ON-resistance ( R \scriptscriptstyle ON) increases from 0.82 at 25 &#x00B0;C to 1.8 \textm&#x03A9;&#x00B7;cm2 at 200 &#x00B0;C. The thermal stability of V\text TH and R \scriptscriptstyle ON are superior to the values reported in SiC MOSFETs and JFETs. At 200 &#x00B0;C, the gate leakage and drain leakage currents remain below 100 &#x03BC;\textA at -7-V gate bias and 1200-V drain bias, respectively. The gate leakage current mechanism is consistent with carrier hopping across the lateral p-n junction. The high-bias drain leakage current can be well described by the Poole-Frenkel (PF) emission model. An avalanche breakdown voltage ( BV\text AVA) with positive temperature coefficient is shown in both the quasi-static I- V sweep and the unclamped inductive switching (UIS) tests. The UIS tests also reveal a BV\text AVA over 1700 V and a critical avalanche energy ( E\text AVA) of 7.44 J/cm2, with the E\text AVA comparable to that of state-of-the-art SiC MOSFETs. These results show the great potentials of vertical GaN Fin-JFETs for medium-voltage power electronics applications.

1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability