English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

This work presents the electrostatic analysis of a novel Ga2O3 vertical Schottky diode with three different guard ring (GR) configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN, and polarization-doped graded p-AlGaN are simulated and analyzed as the GR material, which forms a heterojunction with the Ga2O3 drift layer. GR with nonpolar graded p-AlGaN with a bandgap larger than Ga2O3 is found to show the best performance in terms of screening the electric field at the metal edges. The proposed GR configuration is also compared with a reported Ga2O3 Schottky diode with no GR and a structure with high-resistive nitrogen-doped GR. The optimized design is predicted to have a breakdown voltage as high as 6.2 kV and a specific ON-resistance of 3.55 m&#x03A9;-cm2, which leads to an excellent power figure of merit of 10.8 GW/cm2.

Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown

Design of a β-Ga₂O₃ Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown