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We report on the demonstration and investigation of Ta2O5 as high-k dielectric for InAlN/GaN-MOS high-electron mobility transistor (HEMT)-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~30 was sputter deposited on InAlN/GaN HEMT and was investigated for different post deposition anneal (PDA) conditions. The gate leakage was 16 nA/mm at -15 V which was ~five orders of magnitude lower compared to reference HEMT. The 2-D electron gas (2-DEG) density was found to vary with annealing temperature suggesting the presence of net charge at the Ta2O5/InAlN interface. Dispersion in the capacitance-voltage (C-V) characteristics was used to estimate the frequency-dependent interface charge, while energy band diagrams under flat band conditions were investigated to estimate fixed charge. The optimum anneal condition was found to be 500 &#x00B0;C which has resulted into a flat band voltage spread (&#x0394;VFB) of 0.4 V and interface fix charge (Qf) of 3.98 &#x00D7; 1013 cm-2. X-ray photoelectron spectroscopy spectra of as-deposited and annealed Ta2O5 film were analyzed for Ta and O compositions in the film. The sample annealed at 500 &#x00B0;C has shown Ta:O ratio of 0.41. X-ray diffraction analysis was done to check the crystallization of amorphous Ta2O5 film at higher annealing temperatures.

ieee transactions on electron devices

Investigation of Ta2O5 as an Alternative High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> Dielectric for InAlN/GaN MOS-HEMT on Si

Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si

Investigation of Ta₂O₅ as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si