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We report on the fabrication and characterization of field-effect transistors (FETs) based on chemical vapor deposited (CVD) graphene encapsulated between few layer CVD boron nitride (BN) sheets with complementary metal&#x2013;oxide&#x2013;semiconductor (CMOS) compatible nickel edge contacts. Noncontact terahertz time-domain spectroscopy (THz-TDS) of large-area BN/graphene/ BN (BN/G/BN) stacks reveals average sheet conductivity &#x003E;1 mS/sq. and average mobility of 2500 cm<sup>2</sup>/V <inline-formula> <tex-math notation="LaTeX">$\cdot $ </tex-math></inline-formula> s. Improved output conductance is observed in dc measurements under ambient conditions, indicating the potential for radio frequency (RF) applications. Moreover, we report a maximum voltage gain of 6 dB from a low-frequency signal amplifier circuit. RF characterization of the GFETs yields an <inline-formula> <tex-math notation="LaTeX">${f}_{T}\times {L}_{g}$ </tex-math></inline-formula> product of 2.64 GHz <inline-formula> <tex-math notation="LaTeX">$\cdot ~\mu \text{m}$ </tex-math></inline-formula> and an <inline-formula> <tex-math notation="LaTeX">${f}_{{\textsf {Max}}}\times {L}_{g}$ </tex-math></inline-formula> product of 5.88 GHz <inline-formula> <tex-math notation="LaTeX">$\cdot ~\mu \text{m}$ </tex-math></inline-formula>. This paper presents for the first time THz-TDS usage in combination with other characterization methods for device performance assessment on BN/G/BN stacks. The results serve as a step toward scalable, all CVD 2-D material-based FETs for CMOS compatible future nanoelectronic circuit architectures.

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts