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This paper reports a comprehensive study on the anisotropic electrical properties of vertical (2&#x0305;01) and (010) &#x03B2;-Ga2O3 Schottky barrier diodes (SBDs). The devices were fabricated on single-crystal substrates grown by an edge-defined film-fed growth method. The temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics were systematically measured, analyzed, and compared. The (2&#x0305;01) and (010) SBDs exhibited on-resistances (RON) of 0.56 and 0.77 mQ &#x00B7; cm2, turn-ON voltages (VON) of 1.0 and 1.3 V, Schottky barrier heights (SBHs) of 1.05 and 1.20 eV, electron mobilities of 125 and 65 cm2/(V &#x00B7; s), respectively, with an on-current of ~1.3 kA/cm2 and on/off ratio of ~109. The (010) SBD had a larger VON and SBH due to anisotropic surface properties (i.e., surface Fermi level pinning and band bending), as supported by X-ray photoelectron spectroscopy measurements. Temperature-dependent I-V also revealed the inhomogeneous nature of the SBH in both devices, where the (2&#x0305;01) SBD showed a more uniform SBH distribution. The homogeneous SBH was also extracted: 1.33 eV for the (2&#x0305;01) SBD and 1.53 eV for the (010) SBD. The reverse leakage current of the devices was well described by the two-step trap-assisted tunneling model and the 1-D variable range hopping conduction model. The (2&#x0305;01) SBD showed a larger leakage current due to its lower SBH and/or smaller activation energy, and thus a smaller breakdown voltage. These results indicate that the crystalline anisotropy of &#x03B2;-Ga2O3 can affect the electrical properties of vertical SBDs and should be taken into consideration when designing &#x03B2;-Ga2O3 electronics.

ieee transactions on electron devices

A Comparative Study on the Electrical Properties of Vertical (<inline-formula> <tex-math notation="LaTeX">$\bar{\sf2}01$ </tex-math></inline-formula>) and (010) <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates

A Comparative Study on the Electrical Properties of Vertical ( $\bar{\sf2}01$ ) and (010) $\beta$ -Ga₂O₃ Schottky Barrier Diodes on EFG Single-Crystal Substrates