English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

Trapping-detrapping of a single electron via an individual trap in metal-oxide&#x2013;semiconductor field-effect transistor (MOSFET) gate dielectric constitutes two-level random telegraph signals. Recent 3-D technology computer-aided design (TCAD) simulations, on an individual MOSFET, revealed that with the position of the trap as a random variable, resulting random telegraph signals relative magnitude <inline-formula> <tex-math notation="TeX">\(\Delta I_{{\boldsymbol {{d}}}}/I_{{\boldsymbol {{d}}}}\) </tex-math></inline-formula> in the subthreshold current at low drain voltage can have two distinct distributions: a headed one for a percolation-free channel and a tail one for a percolative channel. The latter may be effectively treated by a literature formula: (<inline-formula> <tex-math notation="TeX">\(\Delta I_{{\boldsymbol {{d}}}}/I_{{\boldsymbol {{d}}}})=(I_{\mathbf {loc}}/I_{{\boldsymbol {{d}}}})^{\mathrm {\mathbf {2}}}\) </tex-math></inline-formula>, where <inline-formula> <tex-math notation="TeX">\(I_{\mathbf {loc}}\) </tex-math></inline-formula> is the local current around the trap. In this paper, we show how to make this formula practically useful. First, we conduct 3-D TCAD simulations on a <inline-formula> <tex-math notation="TeX">\(35\times 35\) </tex-math></inline-formula>-nm<inline-formula> <tex-math notation="TeX">\(^{\mathrm {\mathbf {2}}}\) </tex-math></inline-formula> channel to provide <inline-formula> <tex-math notation="TeX">\(\Delta I_{{\boldsymbol {{d}}}}/I_{{\boldsymbol {{d}}}}\) </tex-math></inline-formula> for a few positions of the trap. This leads to a new statistical model in closed form, which can reproduce headed distributions. Straightforwardly, key criteria are drawn from the model, which can act as guidelines for the adequate use of the <inline-formula> <tex-math notation="TeX">\(I_{\mathbf {loc}}/I_{{\boldsymbol {{d}}}}\) </tex-math></inline-formula> formula. Extension to threshold voltage shift counterparts, from subthreshold through transition to inversion, is successfully achieved. Importantly, use of the model may overcome the drawbacks of the statistical experiment or simulation in the field.

A Statistical Model for the Headed and Tail Distributions of Random Telegraph Signal Magnitudes in Nanoscale MOSFETs