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An original Pearson effective potential (PEP) model for including quantization effects in the simulation of nanoscale nMOSFETs has been introduced in a Monte Carlo (MC) simulator. The PEP correction properly accounts for quantum confinement effects in bulk-, single-, and double-gate silicon-on-insulator nMOS capacitors and nanoscale nMOSFETs devices. The results obtained from semiclassical, PEP-corrected, and multisubband MC approaches are reported and compared for a double-gate nMOSFET with a channel length L C=10 nm and a silicon film thickness T Si=5 nm at low and high drain voltages. Excellent agreements are obtained between PEP-corrected and multisubband MC methods on both electrical characteristics and microscopic quantities. Finally, the impact of quantum confinement effects on drive current is evaluated in double-gate structures over a large range of channel length and silicon film thickness.

A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs