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Nanobundle network thin-film transistors (NB-TFTs) have emerged as a viable higher performance alternative to polysilicon and organic transistors with possible applications in macroelectronic displays, chemical/biological sensors, microelectronic high power transistors, and photovoltaics. A simple analytical model for current-voltage (I-V) characteristics of the NB-TFTs (below the global percolation limit) is proposed and validated by numerical simulation and experimental data. The physics-based predictive model provides a simple relation between the transistor characteristics and the design parameters which can be used for optimization of NB-TFTs. The model provides important insights into the recent experiments on the NB-TFT characteristics and electrical purification of the NB networks

Performance Assessment of Subpercolating Nanobundle Network Thin-Film Transistors by an Analytical Model