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In this article, we propose a broadband fully integrated power amplifier (PA) using a waveform shaping harmonic matching network. A comprehensive theory is developed for the proposed multi-resonance harmonic matching network to derive design criteria for achieving wide bandwidth, low insertion loss, and optimum load impedances in the second- and third-harmonic frequency bands. Furthermore, it is shown that this network can be realized using a lower total inductance compared to a standard bandpass network which is an important feature in reducing chip area and fabrication cost. A fully integrated PA prototype is implemented using a 250-nm GaN-on-SiC process with 28-V supply. The PA provides 33.9&#x2013;36.1dBm output power (at 2&#x2013;3dB gain compression), 42&#x2013;51&#x0025; drain efficiency (DE), 38&#x2013;48&#x0025; power-added efficiency (PAE), and 10&#x2013;12.2dB power gain, across 4.0&#x2013;6.0GHz. The output-power 1-dB bandwidth is 3.6&#x2013;5.6GHz (44.5&#x0025;). For a 64-QAM signal with 8dB peak-to-average power ratio (PAPR) at 5.0GHz, the PA can provide 30.2dBm average output power and 32&#x0025; average PAE with RMS error vector magnitude (EVM) of &#x2212;34.0/&#x2212;32.4/&#x2212;28.4dB (2.0/2.4/3.8&#x0025;) for 50/100/200MHz modulation bandwidth, without using digital predistortion (DPD). The maximum average output power and average PAE, under the linearity constraint EVM &#x003C;&#x2212;28dB, are respectively 32.1/32.0/30.2dBm and 39/38/32&#x0025;, for modulation bandwidth of 50/100/200 MHz.

A Broadband Fully Integrated Power Amplifier Using Waveform Shaping Multi-Resonance Harmonic Matching Network