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Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar array structure causes severe &#x201C;sneak-path&#x201D; interference, which also leads to strong inter-cell correlation. Recent works have mainly focused on sub-optimal data detection schemes by ignoring inter-cell correlation and assuming sneak-path interference is independent between different array cells. In this paper, we propose a near-optimal data detection scheme that can approach the performance bound of the optimal detection scheme. Our detection scheme leverages a joint data and sneak-path interference recovery and can use all inter-cell correlations. The proposed scheme is suitable for data detection of large memory arrays with only linear operation complexity.

Near-Optimal Detection for Both Data and Sneak-Path Interference in Resistive Memories With Random Cell Selector Failures