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Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm2 chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlOx -Al/Nb JJs and geometrical inductors utilizing multiple layers of Nb. To overcome these challenges, we are developing a fabrication process with self-shunted high-Jc JJs and compact thin-film MoNx kinetic inductors instead of geometrical inductors. We present fabrication details and properties of MoNx films with a wide range of Tc, including residual stress, electrical resistivity, critical current, and magnetic field penetration depth &#x03BB;0. As kinetic inductors, we implemented Mo2 N films with Tc about 8 K, &#x03BB;0 about 0.51 &#x03BC;m, and inductance adjustable in the range from 2 to 8 pH/sq. We also present data on fabrication and electrical characterization of Nb-based self-shunted JJs with AlOx tunnel barriers and Jc = 0.6 mA/&#x03BC;m2, and with 10-nm thick Si1-x Nbx barriers, withx from 0.03 to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the electron transport mechanism in Si1-xNbx barriers at x &lt;; 0.08 is inelastic resonant tunneling via chains of multiple localized states. At largerx, their Josephson characteristics are strongly dependent onx and residual stress in Nb electrodes, and in general are inferior to AlOx tunnel barriers.

Superconductor Electronics Fabrication Process with MoNx Kinetic Inductors and Self-Shunted Josephson Junctions