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Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of <formula formulatype="inline"><tex Notation="TeX">$ \hbox{ALD-Al}_{2}\hbox{O}_{3}$</tex></formula> tunnel barriers in superconductor-insulator-superconductor Josephson junctions. A smooth <formula formulatype="inline"><tex Notation="TeX">$\hbox{ALD-Al}_{2}\hbox{O}_{3}$</tex></formula> barrier layer was grown on an Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics of the Josephson junctions made from these trilayers confirmed the integrity of the <formula formulatype="inline"><tex Notation="TeX">$\hbox{ALD-Al}_{2}\hbox{O}_{3}$ </tex></formula> barrier layer. However, the <formula formulatype="inline"><tex Notation="TeX">$I_{\rm c}R_{\rm N}$</tex></formula> product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.

ieee transactions on applied superconductivity

Fabrication of <formula formulatype="inline"><tex Notation="TeX">$\hbox{Nb/Al}_{2}\hbox{O}_{3}/\hbox{Nb}$ </tex></formula> Josephson Junctions Using In Situ Magnetron Sputtering and Atomic Layer Deposition

Fabrication of $\hbox{Nb/Al}_{2}\hbox{O}_{3}/\hbox{Nb}$ Josephson Junctions Using In Situ Magnetron Sputtering and Atomic Layer Deposition