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A novel approach to overcome Boltzmann&#x2019;s tyranny is to exploit the negative capacitance (NC) effect found naturally in many ferroelectric (FE) materials. We apply a set of coupled equations based on electrostatics, Kirchoff&#x2019;s law, and a well-calibrated Ginzburg-Landau-Khalatnikov technology computer-aided design (TCAD) model to simulate an organic FE poly(vinylidene fluoride- <italic>co</italic> -trifluoroethylene) [P(VDF-TrFE)]-based resistor metal-FE-metal (<inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>-MFM) series circuit and a Landau transistor (LT) exhibiting sub-60 mV/decade subthreshold swing (<italic>SS</italic>). TCAD simulation parameters for P(VDF-TrFE) are derived from the reported experimental polarization versus voltage characteristics using Landau theory. Unlike oxide FEs, the P(VDF-TrFE)-based <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>-MFM series circuit can exploit the NC effect at a lower supply voltage (<inline-formula> <tex-math notation="LaTeX">$V_{G}$ </tex-math></inline-formula>) of &#x00B1;0.5 V with little energy dissipation of &#x007E;2.7 fJ through <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>. Our simulation results show an 84.89&#x0025; reduction in the P(VDF-TrFE)&#x2019;s coercivity concerning the oxide FE. We show that the underlying mechanism of the NC effect is directly related to FE polarization (FE-<inline-formula> <tex-math notation="LaTeX">$P$ </tex-math></inline-formula>) switching. The NC effect occurs only when the FE-<inline-formula> <tex-math notation="LaTeX">$P$ </tex-math></inline-formula> is in the negative curvature of the P(VDF-TrFE)&#x2019;s free energy landscape. The NC effect is explored in terms of <inline-formula> <tex-math notation="LaTeX">$V_{G}$ </tex-math></inline-formula>, FE thickness, domain variations, <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula>, and dipole switching resistivity. The influence of <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula> variation on the NC time (<inline-formula> <tex-math notation="LaTeX">$\delta t$ </tex-math></inline-formula>) is investigated at 100 kHz. We can observe that <inline-formula> <tex-math notation="LaTeX">$\delta t$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula> have a linear relationship. As <inline-formula> <tex-math notation="LaTeX">$R$ </tex-math></inline-formula> approaches zero, we determined that the inherent FE-<inline-formula> <tex-math notation="LaTeX">$P$ </tex-math></inline-formula> switching speed exclusively restricts the NC effect. Finally, a 32 nm P(VDF-TrFE) LT provides a minimal <italic>SS</italic> of 23.39 mV/decade, 74.92&#x0025; less than its CMOS counterpart. Therefore, the proposed organic MFM stack could open the path for developing beyond CMOS transistor technology operating in sub-60 mV/decade.

Physical Cause and Impact of Negative Capacitance Effect in Ferroelectric P(VDF-TrFE) Gate Stack and Its Application to Landau Transistor