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We introduce the first monolithic step-up dc&#x2013;dc converter operating at deep sub-1 V (i.e., 0.18&#x2013;0.4 V) that outputs significant power for Internet-of-Things with a peak power efficiency of 81.2&#x0025; at 50 <inline-formula> <tex-math notation="LaTeX">$ {\mu }\text{W}$ </tex-math></inline-formula> output power for the 0.18-V input and 87.1&#x0025; at 300 <inline-formula> <tex-math notation="LaTeX">$ {\mu }\text{W}$ </tex-math></inline-formula> output power for 0.4 V. It is implemented in 16-nm FinFET CMOS and uses an MOS transistor as a high-density flying capacitor for energy conversion. The capacitor is arranged in a self-biased deep N-well topology, which enhances the overall efficiency by 9.5&#x0025;. An integrated time-to-digital converter verifies the dc&#x2013;dc output quality.

A 180 mV 81.2%-Efficient Switched-Capacitor Voltage Doubler for IoT Using Self-Biasing Deep N-Well in 16-nm CMOS FinFET