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A mesa gate structure consisting of Zn-doped GaN (GaN:Zn) enables the normally off operation of AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on an Si substrate. A back-gate structured transistor was prepared to estimate the energy level of Zn (<inline-formula> <tex-math notation="LaTeX">${E}_{\text {T}}$ </tex-math></inline-formula>) within the energy band of GaN. The test device comprises AlGaN, GaN, GaN:Zn, and buffer layers on an Si wafer working as the back-side gate; the current transient was measured after a negative bias was applied to the gate. This experiment reveals <inline-formula> <tex-math notation="LaTeX">${E}_{\text {T}}- {E}_{\text {V}} =0.32$ </tex-math></inline-formula> eV, where <inline-formula> <tex-math notation="LaTeX">${E}_{\text {V}}$ </tex-math></inline-formula> is the valence band maximum of GaN, meaning that the Fermi level lies near <inline-formula> <tex-math notation="LaTeX">${E}_{\text {v}}$ </tex-math></inline-formula>, as in p-type materials. Thus, a transistor equipped with a mesa-shaped gate structure with a Zn concentration of 1.2 <inline-formula> <tex-math notation="LaTeX">$\times 10^{{19}}$ </tex-math></inline-formula> cm−3 achieves a gate-source voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {gs}}$ </tex-math></inline-formula>) of +0.5 V at a drain current (<inline-formula> <tex-math notation="LaTeX">${i}_{\text {d}}$ </tex-math></inline-formula>) of 10 <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>Amm−1, and <inline-formula> <tex-math notation="LaTeX">${V}_{\text {gs}} > {0}$ </tex-math></inline-formula> V even at <inline-formula> <tex-math notation="LaTeX">${i}_{\text {d}} = {10}$ </tex-math></inline-formula> nAmm−1.

Zn-Doped GaN Comprising the Gate Structure of Normally Off AlGaN/GaN-HFETs