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We demonstrate over 3 kV gate-pad-connected field plated (GPFP) &#x03B2;-Ga2O3 lateral MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 &#x03A9;.mm can be achieved. The GPFP design adopted here using plasma-enhanced chemical vapor deposited (PECVD) SiNx dielectric and SiNx/SiO2 wrap-around passivation exhibits up to ~14% improved RON, up to ~70% improved breakdown voltage ( VBR = VDS-VGS) resulting in up to 3&#x00D7; higher LFOM compared to the non-FP &#x03B2;-Ga2O3 lateral MESFETs. The VBR (~2.5 kV) and LFOM (355 MW/cm2) measured simultaneously in our GPFP &#x03B2;-Ga2O3 lateral MESFET (with LGD = 10&#x03BC;m) is the highest value achieved in any depletion-mode &#x03B2;-Ga2O3 lateral device to date.

Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²