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We demonstrated amber InGaN <inline-formula> <tex-math notation="LaTeX">$47\times 47\,\,\mu \text{m}^{{2}}$ </tex-math></inline-formula> micro-light-emitting diodes (<inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LEDs) with the peak wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm2. The amber <inline-formula> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>LEDs exhibited a 33-nm blue-shift of the peak wavelength and obtain broader FWHMs to approximately 56 nm at 5 to 100 A/cm2. The peak on-wafer external quantum efficiency was 0.56&#x0025; at 20 A/cm2. The characteristic temperature was 50&#x2013;80 K at 20 to 60 A/cm2 but increased to 120&#x2013;140 K at 80 to 100 A/cm2. The strong increase in the characteristic temperature from 60 to 80 A/cm2 could mainly be attributed to the saturation of the Shockley-Read-Hall non-radiative recombination at high current densities.

606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%