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In this work, we demonstrate scaled back-endof-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semiconductor is understood by the formation of high density 2D channel beyond 4 &#x00D7; 1013/cm2 at HfO2/In2O3 oxide/oxide interface.

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V