English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We present a circuit-design compatible large-signal compact model ofmetal-insulator-graphene (MIG) diodes for describing its dynamic response forthe first time. The model essentially consists of a voltage-dependent diodeintrinsic capacitance coupled with a static voltage-dependent current source,the latter accounts for the vertical electron transport from/towards graphene,which has been modeled by means of the Dirac-thermionic electron transporttheory through the insulator barrier. Importantly, the image force effect hasbeen found to play a key role in determining the barrier height, so it has beenincorporated into the model accordingly. The resulting model has beenimplemented in Verilog A to be used in existing circuit simulators andbenchmarked against an experimental 6-nm TiO2 barrier MIG diode working as apower detector.

Large-signal model of the Metal-Insulator-Graphene diode targeting RF applications