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Wrap-around gate GaN nanowire MOSFETs using Al2O3 as gate oxide have been experimentally-demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 &#x03BC;A/&#x03BC;m (normalized by nanowire circumference), on/off ratio over 108, an intrinsic transconductance of 27.8 &#x03BC;S/&#x03BC;m, for a switching efficiency figure of merit, Q = gm/SS of 0.41 &#x03BC;S/&#x03BC;m-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications, such as sensors and RF for the Internet of Things.

GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope