English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this letter, we report on high-performance depletion/enhancement-mode <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm {\sf D}}$ </tex-math></inline-formula>) of 600/450 mA/mm, which are nearly one order of magnitude higher than any other reported <inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm {\sf D}}$ </tex-math></inline-formula> values. The threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {\sf T}}$ </tex-math></inline-formula>) can be modulated by varying the thickness of the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 films and the E-mode GOOI FET can be simply achieved by shrinking the <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 film thickness. Benefiting from the good interface between <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3 and SiO2 and wide bandgap of <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>-Ga2O3, a negligible transfer characteristic hysteresis, high <inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm {\sf D}}$ </tex-math></inline-formula> ON/OFF ratio of <inline-formula> <tex-math notation="LaTeX">$10^{10}$ </tex-math></inline-formula>, and low subthreshold swing of 140 mV/decade for a 300-nm-thick SiO2 are observed. E-mode GOOI FET with source to drain spacing of 0.9-<inline-formula> <tex-math notation="LaTeX">$\sf \mu \text{m}$ </tex-math></inline-formula> demonstrates a breakdown voltage of 185 V and an average electric field (E) of 2 MV/cm, showing the great promise of GOOI FET for future power devices.

High-Performance Depletion/Enhancement-ode $\beta$ -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm