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The distinct negative differential resistance (NDR) mechanism arising from interlayer angular rotation in three-terminal graphene-BN heterostructures, as a function of both the twisting angle and the gate bias, is simulated and analyzed. Analytical expressions for the positions of the NDR peaks in the I-V characteristics are developed. To capture the degradation of peak-to-valley ratios observed in experiment at room temperature, electron-phonon scattering has been added to the simulation and good agreement with experiment is achieved. Our simulation also shows a robust preservation of NDR feature when temperature increases.

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering