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Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-&#x03BC;m gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 &#x03BC;S/&#x03BC;m at VDS = -2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak gm = 66 &#x03BC;S/&#x03BC;m at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 &#x03BC;S/&#x03BC;m. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.

Ambipolar Black Phosphorus MOSFETs With Record n-Channel Transconductance