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For the first time, polyethyleneimine (PEI) doping on multilayer MoS<sub>2</sub> field-effect transistors is investigated. A 2.6 times reduction in sheet resistance and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON-current and 50% improvement in extrinsic field-effect mobility. The threshold voltage confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS<sub>2</sub> transistors and its potential applications in layer-structured semiconducting 2-D crystals.

ieee electron device letters

Molecular Doping of Multilayer <formula formulatype="inline"><tex Notation="TeX">${\rm MoS}_{2}$</tex> </formula> Field-Effect Transistors: Reduction in Sheet and Contact Resistances

Molecular Doping of Multilayer ${\rm MoS}_{2}$ Field-Effect Transistors: Reduction in Sheet and Contact Resistances