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Surface antireflectance and passivation properties of the Al2O3 films deposited on Czochralski Si wafers by atomic layer deposition (ALD) are investigated. Textured Si with 100-nm Al2O3 shows a very low average reflectance of ~2.8%. Both p- and n-type Si wafers are well passivated by Al2O3 films. The maximal minority carrier lifetimes are improved from ~10 &#x03BC;s before Al2O3 passivation to above 3 ms for both p- and n-type Si after Al2O3 film deposition and annealing at an appropriate temperature. Hence, an ALD-deposited Al2O3 film shows the dual function of antireflectance and surface passivation for solar cell applications.

ieee electron device letters

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> Films

Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ Films