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We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors from 2 &#x03BC;m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger VT shifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2 crystal underwent the transition from depletion mode to enhancement mode.

ieee electron device letters

<formula formulatype="inline"><tex Notation="TeX">$\hbox{MoS}_{2}$</tex></formula> Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming