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InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.

ieee electron device letters

Size-Dependent-Transport Study of <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$</tex></formula> Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion