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We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on 2-D layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel MOSFETs with ALD Al2O3 as the gate dielectric. Our C- V study of MOSFET structures shows good interface between 2-D MoS2 crystal and ALD Al2O3. Maximum drain currents using back gates and top gates are measured to be 7.07 and 6.42 mA/mm, respectively, at Vds = 2 V with a channel width of 3 &#x03BC;m, a channel length of 9 &#x03BC;m, and a top-gate length of 3 &#x03BC;m. We achieve the highest field-effect mobility of electrons using back-gate control to be 517 cm2/V&#x00B7;s. The highest current on/off ratio is over 108.

ieee electron device letters

<formula formulatype="inline"><tex Notation="TeX">$\hbox{MoS}_{2}$</tex></formula> Dual-Gate MOSFET With Atomic-Layer-Deposited <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> as Top-Gate Dielectric

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric