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In this letter, we propose a channel backscattering model in which increased carrier temperature at the top of the potential energy barrier in the channel is taken into account. This model represents an extension of a previous model by the same authors, which highlighted the importance of considering the partially ballistic transport between the source contact and the top of the potential energy barrier in the channel. The increase in carrier temperature is precisely due to energy dissipation between the source contact and the top of the barrier caused by high saturation current. To support our discussion, accurate 2-D full-band Monte Carlo device simulations with quantum correction have been performed in double-gate n-type metal-oxide-semiconductor field-effect transistors for different geometry (gate length down to 10 nm), biases, and lattice temperatures. Including the effective carrier temperature is particularly important to properly treat the high-inversion regime, where previous backscattering models usually fail.

A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET