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A dual-gate graphene field-effect transistor is presented, which shows improved radio-frequency (RF) performance by reducing the access resistance using electrostatic doping. With a carrier mobility of 2700 cm<sup>2</sup>/V · s, a cutoff frequency of 50 GHz is demonstrated in a 350-nm-gate-length device. This f<sub>T</sub> value is the highest frequency reported to date for any graphene transistor, and it also exceeds that of Si MOS field-effect transistors at the same gate length, illustrating the potential of graphene for RF applications.

Dual-Gate Graphene FETs With $f_{T}$ of 50 GHz