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Hysteretic switching with a sub-<italic>kT/q</italic> steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-<italic>k</italic> dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-<italic>kT/q</italic> switching due to FE negative capacitance is observed not at low currents, but in strong inversion (<inline-formula> <tex-math notation="LaTeX">${I}_{d}\sim $ </tex-math></inline-formula> 100 <inline-formula> <tex-math notation="LaTeX">$\mu \text{A}/\mu \text{m}$ </tex-math></inline-formula>). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau&#x2013;Devonshire theory and the Landau&#x2013;Khalatnikov equation.

Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

Sub-kT/q Switching in Strong Inversion in PbZr_0.52Ti_0.48O₃ Gated Negative Capacitance FETs