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We carry out an In0.53Ga0.47As&#x002F;In0.52Al0.48As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60&#x0025; at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorporated to avoid the tradeoff between dark count rate, afterpulsing and timing jitter, paving the possibility to improve the overall performance of a single photon detector. Based on this elevated device structure, we further optimize the detection efficiency and timing jitter by employing a delicate mesa structure to better confine the electric field distribution within the central multiplication region. For our detector operated under gated mode, a shorten gate width together with an increase of excess bias percentage leads to a significant improvement in the detection performance. We eventually achieve a single photon detection efficiency of 61.4&#x0025; without the involvement of afterpulsing at the gating frequency of 10 kHz for 200 K.

ieee journal of selected topics in quantum electronics

In0.52Al0.48As Based Single Photon Avalanche Diodes With Stepped E-Field in Multiplication Layers and High Efficiency Beyond 60&#x0025;