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We present the design and the experimental characterization of a new InGaAs&#x002F;InP single-photon avalanche diode (SPAD), with two different diameters: i) a 10 &#x03BC;m device, suitable for optical fiber-based quantum applications; ii) a 25 &#x03BC;m one, more appropriate for free-space applications. Compared to a previous generation, we improved the design of the double zinc diffusion and optimized the layer structure. We achieved low dark count rate, around 1 kcps and 4 kcps at 225 K and 5 V excess bias for 10 &#x03BC;m and 25 &#x03BC;m devices, respectively, and down to few tens of counts per seconds at 175 K for the 10 &#x03BC;m detector. At 5 V excess bias and 225 K temperature, both devices also show a high photon detection efficiency (33&#x0025; at 1064 nm, 31&#x0025; at 1310 nm and 25&#x0025; at 1550 nm for the 10 &#x03BC;m SPAD). Afterpulsing has been measured with a custom readout integrated circuit, achieving very low probability values. Timing jitter is comparable to previous-generation devices.

Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications