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We report electrically pumped, continuous-wave (cw) InAs&#x002F;GaAs quantum dot (QD) lasers directly grown on quasi-nominal Si (001) substrates with offcut angle as small as 0.4&#x00B0;. No GaP, Ge buffer layers or substrate patterning is required. An anti-phase boundary free epitaxial GaAs film was grown by metal-organic chemical vapor deposition (MOCVD) with a low threading dislocation density of 3 &#x00D7; 107 cm&#x2212;2. Room-temperature cw lasing at &#x223C;1.3&#x00A0;&#x03BC;m has been achieved, with a minimum threshold current density of 34.6 A&#x002F;cm2 per layer, a maximum operating temperature of 80&#x00A0;&#x00B0;C, and a maximum single facet output power of 52 mW. A comparison of various monolithic III-V hetero-epitaxy on Si solutions is presented. Direct growth on unpatterned quasi-nominal (001) Si may yield the best material quality at the lowest lifecycle cost.

Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si