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This work presents a self-timed resonant high-voltage (HV) dc&#x2013;dc converter in HV CMOS silicon-on-insulator (SOI) with a one-step conversion from 100&#x2013;325 V input down to a 3.3&#x2013;10 V output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the HV converter is fully integrated, including an on-chip power stage, with only one external inductor (10 <inline-formula> <tex-math notation="LaTeX">$\mu \text{H}$ </tex-math></inline-formula>) and capacitor (470 nF). It reaches a high power density of 752 mW/cm<sup>3</sup>, an overall peak efficiency as high as 81&#x0025;, and a light-load efficiency of 73.2&#x0025; at 5 V and 50 mW output. HV loss-reduction techniques are presented and experimentally confirmed to offer an efficiency improvement of more than 32&#x0025;. Integrated HV insulated gate bipolar transistors (IGBTs) are discussed and implemented as an attractive alternative to conventional integrated HV power switches, resulting in &#x007E;20&#x0025; smaller area at lower losses.

A Resonant One-Step 325 V to 3.3–10 V DC–DC Converter With Integrated Power Stage Benefiting From High-Voltage Loss-Reduction Techniques