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In-situ Cd-saturated growth of polycrystalline CdTe:As thin film was performed by metal organic chemical vapour deposition at a low temperature of 350 &#x00B0;C, to investigate the impact on As doping and device V OC . Device characterization showed conversion efficiency of &#x223C;14&#x0025;, and V OC  of 772 mV, which is an improvement to the baseline device with CdTe:As absorber layer grown at 390 &#x00B0;C under non-saturated conditions. When the low temperature Cd-saturated growth was combined with chlorine heat treatment at a higher temperature of 440 &#x00B0;C (in contrast with the standard 420 &#x00B0;C) for 10 min, device efficiency improved to &#x223C;17&#x0025; with a high V OC  of 877 mV. As a result, &#x223C;100 mV boost in V OC  from baseline is demonstrated with Cd-saturated CdTe:As device. Micro-photoluminescence and time-resolved photoluminescence measurements performed on these Cd-saturated CdTe:As devices confirmed that minority carrier lifetime significantly improved.

Impact of In-Situ Cd Saturation MOCVD Grown CdTe Solar Cells on As Doping and V OC