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We simulate the optical coupling between <inline-formula><tex-math notation="LaTeX">$2.3\ {\boldsymbol{\mu m}}$</tex-math></inline-formula> GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the waveguide that arises from the laser etched-facet definition. We also model alternative approaches consisting in filling the gap with higher-refractive index materials transparent in the mid-infrared window. Finally, because of their fabrication flexibility, we propose to implement polymeric waveguides in order to achieve improved coupling performances.

Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms