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Light emitters integrated with Si platform are highly desirable for photonic integrated circuits, however, manufacturing them remains difficult. In this work, BGaAs/GaP quantum well (QW) structures are proposed as a promising solution of the challenge. These QWs can be grown on GaP/Si templates, which are intensively developed for recent years. An 8-band k&#x00B7;p model, envelope function approximation, self-consistency in solving of Schro&#x0308;dinger and Poisson equations with parabolic approximations of the indirect valleys and Fermi golden rule are used to calculate and analyze the material optical gain spectra of the QWs. A positive material gain is found for the QWs with 10-35% BAs mole fraction, with zinc-blende BGaAs epilayers grown on the GaP(001) substrates as direct gap semiconductors. It is predicted that such structures emit red light with wavelengths from the range of 730-690 nm. Optimal QWs widths for maximal TE and TM gain polarizations are below the critical thickness of BGaAs grown on the GaP(001). Presented results clearly indicate that BGaAs/GaP QW system is a very promising gain medium for Si-compatible photonic integrated circuits.

Optical Gain Characteristics of BGaAs/GaP Quantum Wells