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Broadband absorber in the terahertz region (0.1-10 THz) has attracted considerable attentions due to its important applications in detecting, imaging, and electromagnetic stealth. Recently, terahertz absorber with broadband features has been widely investigated, however, the achievement of ultrabroad bandwidth is still challenging due to the limitations of complex structural design and fabrication processes. In this paper, an ultrabroadband terahertz absorber covering the entire terahertz regime (0.1-10 THz) based on the heavily doped silicon has been designed and fabricated, which is composed of double-layer binary gratings filled with the SU-8 photoresist. Antireflection techniques (SU-8 layer) were utilized to further promote the performance of the terahertz absorber at high frequencies through matching the impedance between free space and doped-silicon substrate. The measured absorption exceeding 87% within the frequency range of 0.3-10 THz has verified the proposed approach in designing the ultrabroadband terahertz absorber. Furthermore, the designed absorber remains high performance in the case of wide-angle incidence even up to 60&#x00B0;. Benefiting from the simple structure, the absorber is easy to be fabricated by common optical lithography. We believe that the results of this paper could broaden the application areas of terahertz absorbers.

An Ultrabroadband THz Absorber Based on Structured Doped Silicon With Antireflection Techniques