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In this paper, a graded-index strained Si1-xGex optical PN phase shifter with multiple strained layers has been proposed for high speed data modulation at 1550 nm with low device footprint. The quasi-vectorial finite difference method, non-local empirical pseudopotential method and the Payne-Lacey model has been used to analyze the proposed device. A phase shift of 122&#x00B0;/mm, V&#x03C0;L&#x03C0; of 0.74 V.cm, and insertion loss of 4 dB at 5 V reverse bias with a 3-dB modulation bandwidth of 27.5 GHz has been obtained for a 500 nm x 250 nm cross-section rib waveguide with 50 nm slab. A 15&#x00B0;/mm increase in phase shift and 0.08 V.cm decrease in V&#x03C0;L&#x03C0; has been observed when the junction is shifted by 60 nm towards the N side.

ieee photonics journal

Design and Analysis of a Graded-Index Strained Si<inline-formula><tex-math notation="LaTeX">$_{1-x}$ </tex-math></inline-formula>Ge<inline-formula><tex-math notation="LaTeX">$_x$</tex-math></inline-formula> Optical PN Phase Shifter

Design and Analysis of a Graded-Index Strained Si$_{1-x}$ Ge$_x$ Optical PN Phase Shifter