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We implement finite difference method (FDM) to calculate the optical cavity effects in InGaN micro-light-emitting diodes (LEDs) with metallic coating. The dispersion relation, mode profile, energy density <inline-formula> <tex-math notation="LaTeX">$W$</tex-math></inline-formula> of electromagnetic field, cavity quality factor <inline-formula><tex-math notation="LaTeX">$Q$</tex-math></inline-formula>, and effective mode area <inline-formula> <tex-math notation="LaTeX">$A_{e\,f\,f}$</tex-math></inline-formula> are theoretically investigated. The results show that although the strongest confinement of the field is achieved by surface plasmon modes at GaN/Ag interface, the energy density <inline-formula><tex-math notation="LaTeX">$W$</tex-math></inline-formula> is small inside the cavity, leading to a high effective mode area. Additionally, the cavity without metallic coating has the highest <inline-formula><tex-math notation="LaTeX">$Q$</tex-math></inline-formula> factors since no metal loss is involved. These results can serve as guidelines for the design and fabrication of high efficiency and high speed LEDs for the applications of solid-state lighting and visible-light communication.

Optical Cavity Effects in InGaN Micro-Light-Emitting Diodes With Metallic Coating