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Significant impact of the ion-implant straggle of the P&#x002B; shielding region on the static and dynamic characteristics of 1.2 kV 4H-SiC power MOSFETs is demonstrated in this paper by using analytical and TCAD modeling. The P&#x002B; region ion-implant straggle not only reduces the JFET width but increases the channel length. This combination is shown to displace a SiC power MOSFET structure optimized without ion-implant straggle away from the optimum JFET width required to achieve the lowest specific on-resistance, resulting in an increase in the specific on-resistance by a factor of 2-3x for the typically used JFET width of <inline-formula> <tex-math notation="LaTeX">$0.7 \mu \text{m}$ </tex-math></inline-formula>. The theoretical analysis is supported by data measured on 1.2 kV SiC power MOSFETs fabricated with channel lengths of 0.3 and <inline-formula> <tex-math notation="LaTeX">$0.5 \mu \text{m}$ </tex-math></inline-formula> using both accumulation and inversion mode channels. The presence of the P&#x002B; shielding region ion-implant straggle is shown to: (a) increase specific on-resistance by 15-30&#x0025;; (b) suppress short-channel effects; (c) reduce electric field in the gate oxide; (d) reduce the transconductance; (e) reduce saturated drain current; and (f) significantly reduce the gate-drain capacitance and gate charge. Impact of P&#x002B; shielding region lateral straggle on device cell optimization is an important contribution of this paper.

Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters