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In this study, the extended-gate field-effect transistor (EGFET) with an on-chip sensing window under the TSMC <inline-formula> <tex-math notation="LaTeX">$0.18{\mu }\text{m}$ </tex-math></inline-formula> 1P6M (one poly and six metals) CMOS process technology was fabricated as a biosensor. The sensing window was composed of six metal layers and functionalized with the ruthenium dioxide (RuO<sub>2</sub>) thin film and uricase for uric acid detection. The RuO<sub>2</sub> thin film was deposited on the top metal layer of the sensing window using the radio frequency (RF) sputtering system. The silver probe was employed as a reference electrode to provide a voltage to the test solution with a micro-volume of <inline-formula> <tex-math notation="LaTeX">$0.5 {\mu }\text{L}$ </tex-math></inline-formula>. The properties of the EGFET for uric acid detection were investigated through the semiconductor parameter analyzer. The EGFET had a voltage and the current sensitivity of 8.63 mV/(mg/dL) and 0.17 (<inline-formula> <tex-math notation="LaTeX">${\mu }\text{A}$ </tex-math></inline-formula>)<inline-formula> <tex-math notation="LaTeX">$^{1/2}$ </tex-math></inline-formula>/(mg/dL), respectively. The device worked with a supply voltage lower than 1.8V. Based on the results, the fabrication of the miniaturized biosensor device was a success. Due to its advantages such as the use of low voltage and its simple fabrication process, it could help realize the development of a wearable biosensor.

Analysis of CMOS Extended-Gate Field-Effect Transistor With On-Chip Window Based on Uricase/RuO2 Sensing Film

Analysis of CMOS Extended-Gate Field-Effect Transistor With On-Chip Window Based on Uricase/RuO₂ Sensing Film