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Flexible electronic devices featured with miniaturization, light weight and integration, can meet the needs of new generation mobile electronics, and thus have received extensive attention. Obtaining the stable logic devices on flexible substrates is a prerequisite for the application of flexible electronic devices. In this paper, we report the fabrication of organic-inorganic heterojunction ambipolar transistors on flexible Polyimide (PI) substrate and the application of ambipolar transistors in logic circuits. The ambipolar transistors are fabricated by directly depositing p-type organic material dioctylbenzothieno[2,3-b]benzothiophene (C8-BTBT) on amorphous indium-gallium-zinc oxide (a-IGZO) TFT. The fabricated ambipolar transistors with vertically stacked structure show obviously V shape transfer characteristic curves. In addition, the complementary-like inverter is realized with two identical heterojunction ambipolar transistors, which can work in both first and third quadrants. This work provides a method of processing heterojunction ambipolar transistors on flexible substrate by almost fully photolithographic steps, which shows possible potential in the field of flexible electronics devices.

Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate