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A layered polycrystalline WS2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>MISFET is successfully demonstrated with TiN/HfO2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula>&#x2013;<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> characteristics with <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>-type operation are confirmed in WS2 MISFETs with a maximum field effect mobility of <inline-formula> <tex-math notation="LaTeX">$1.5\times10$ </tex-math></inline-formula>&#x2212;2 cm2V&#x2212;1s&#x2212;1. Therefore, our film-formation method is a promising candidate for <inline-formula> <tex-math notation="LaTeX">$p$ </tex-math></inline-formula>MOSFETs in CMOS circuits.

ieee journal of the electron devices society

WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its <italic>p</italic>MISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box