English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on recently manufactured commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor (MOS) field-effect transistors (MOSFETs) from three vendors. Abrupt changes of the electric field acceleration parameters ( γ) are observed at oxide electric fields ( Eox) around 8.5 MV/cm to 9 MV/cm for all commercial MOSFETs. Gate leakage currents and threshold voltage shifts are also monitored under different oxide fields ( Eox = 8 MV/cm and 10 MV/cm). The results suggest the failure mode under high oxide electric field is modified by impact ionization or Anode Hole Injection (AHI) induced hole trapping. This observation agrees with previously published oxide reliability studies on SiC MOSFETs and suggests that constant-voltage TDDB measurements need to be carefully performed under low oxide fields to avoid lifetime overestimation caused by hole trapping. The extrapolated t63% lifetimes (times to 63% failures) from TDDB measurements performed at Eox <; 8.5 MV/cm are longer than 108 hours at 150°C for all vendors. The predicted lifetimes at Eox = 4 MV/cm demonstrate more than 105 times increases than the oxide lifetimes reported a decade ago, showing promising progress in SiC technology.

Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs