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Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA &#x003D; 6 <inline-formula> <tex-math notation="LaTeX">$\mu \text{A}$ </tex-math></inline-formula>/cm<sup>2</sup> at 1250 V), excellent forward characteristics (ideality factor &#x007E;1.6), and low specific on-resistance (1.1 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula>.cm<sup>2</sup>) were realized by mitigating plasma etch-related defects at the regrown interface. Epitaxial <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>-GaN layers grown by metal-organic chemical vapor deposition on free-standing GaN substrates were etched using inductively coupled plasma etching (ICP), and we demonstrate that a slow reactive ion etch (RIE) prior to <inline-formula> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula>-GaN regrowth dramatically increases diode electrical performance compared to wet chemical surface treatments. Etched-and-regrown diodes without a junction termination extension (JTE) were characterized to compare diode performance using the post-ICP RIE method with prior studies of other post-ICP treatments. Then, etched-and-regrown diodes using the post-ICP RIE etch steps prior to regrowth were fabricated with a multi-step JTE to demonstrate kV-class operation.

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage