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An optimized doping process is used to achieve extremely-low threshold voltage (ELVT) FinFETs for low-power mmWave applications based on 12nm node technology platform. With the <inline-formula> <tex-math notation="LaTeX">$V_{TH}\approx 100$ </tex-math></inline-formula>mV ELVT FinFET shows 15&#x0025; <inline-formula> <tex-math notation="LaTeX">$I_{EFF}$ </tex-math></inline-formula> improvement at the same <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> compared to its super-low threshold voltage (SLVT) counterpart, while mismatch and reliability performances are comparable. <inline-formula> <tex-math notation="LaTeX">$F_{T}/F_{MAX}$ </tex-math></inline-formula> of &#x007E;305GHz/&#x007E;315GHz and comparable Maximum Stable Gain (<italic>MSG</italic>) to SLVT FinFET gives ELVT FinFET an advantage for mmWave 5G low-power applications. Local oscillator (LO) chain blocks are investigated as a circuit level example to confirm the benefits of ELVT FinFET. An optimized LO transmission Line (TL) driver using ELVT FinFETs results in &#x007E;9&#x0025; and &#x007E;8&#x0025; reduction in <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> and power consumption respectively at the same phase-noise (PN) level as the SLVT based design. If operated at the same <inline-formula> <tex-math notation="LaTeX">$V_{DD}$ </tex-math></inline-formula> of 0.525V ELVT FinFET can improve the VCO Figure of Merit (<inline-formula> <tex-math notation="LaTeX">$FOM_{VCO}$ </tex-math></inline-formula>) by &#x007E;2.8dB.

Extremely-Low Threshold Voltage FinFET for 5G mmWave Applications