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A reverse-blocking AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (RB-MISHEMT) is proposed and fabricated. Compared with the conventional MISHEMT with ohmic drain, the proposed device features a hybrid Schottky-ohmic drain with a low work function Tungsten (W), based on which the state-of-the-art ultralow turn-on voltage (<inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ on}}$ </tex-math></inline-formula>) of 0.25 V could be realized without degradation in on-state characteristics. In addition, the fabricated RB-MISHEMT exhibits the excellent reverse blocking voltage of &#x2212;1332 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}}= 0$ </tex-math></inline-formula> V) and forward blocking voltage of 1315 V (at <inline-formula> <tex-math notation="LaTeX">${V} _{\mathrm{ GS}} = -15$ </tex-math></inline-formula> V) with a specific on-resistance (<inline-formula> <tex-math notation="LaTeX">${R} _{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of 3.5 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula>cm<sup>2</sup>, leading in the highest power figure-of-merit (FOM) of &#x003E; 494 MW/cm<sup>2</sup>. The good thermal stability could also be observed in fabricated RB-MISHEMT. The corresponding operation mechanism of RB-MISHEMT are also revealed by Silvaco ATLAS simulations. These results demonstrate the great potential in power electronics applications.

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V