English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this work, polycrystalline-silicon thin-film transistors (poly-Si TFTs) with asymmetric low metal contamination Ni-induced lateral crystallization (LC-NILC) poly-Si channel and high-&#x03BA; HfO<sub>2</sub> gate insulator (GI) have been successfully fabricated and demonstrated for the first time. The amounts of Ni diffused into the poly-Si film can be effectively reduced by Ni removal processes prior to NILC. The asymmetric LC-NILC poly-Si TFTs exhibit higher field-effect mobility (&#x03BC;FE), steeper ideal subthreshold swing (S.S.), larger ON/OFF currents ratio (ION/IOFF), better uniformity, and improved C-V curves compared to traditional NILC (T-NILC) poly-Si TFTs owing to better crystallization quality and less low metal contamination. These remarkable device characteristics and the matched complementary TFTs (C-TFTs) electrical characteristics with low IOFF and low operation voltages make the asymmetric LCNILC poly-Si TFTs promising for the future back-end of line (BEOL) compatible devices applications in monolithic three-dimension integrated circuits (3D-ICs).

ieee journal of the electron devices society

Asymmetric Low Metal Contamination Ni-Induced Lateral Crystallization Polycrystalline-Silicon Thin-Film Transistors With Low OFF-State Currents for Back-End of Line (BEOL) Compatible Devices Applications